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Kingston HyperX Impact Black 8GB DDR3 Laptop RAM (1600MHz - CL9 - Low Voltage - HX316LS9IB/8)

Category: computers laptops

Description: Kingston HyperX Impact Black 8GB DDR3 Laptop RAM (1600MHz - CL9 - Low Voltage - HX316LS9IB/8)Kingston HyperX Impact Black 8GB DDR3 Laptop RAM (1600MHz - CL9 - Low Voltage - HX316LS9IB/8) is best in online store. I will call in short name as Kingston HyperX Impact Black 8GB DDR3 Laptop RAM (1600MHz - CL9 - Low Voltage - HX316LS9IB/8) For many who are looking for Kingston HyperX Impact Black 8GB DDR3 Laptop RAM (1600MHz - CL9 - Low Voltage - HX316LS9IB/8) review. We've more info about Detail, Specification, Customer Reviews and Comparison Price. I would really like recommend that you always check the latest price before buying.

Price:RM 293.80

 

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Kingston HyperX Impact Black 8GB DDR3 Laptop RAM (1600MHz - CL9 - Low Voltage - HX316LS9IB/8)

RM 293.80 USD

Availability: In stock

Kingston HyperX Impact Black 8GB DDR3 Laptop RAM (1600MHz - CL9 - Low Voltage - HX316LS9IB/8) Reviews & Suggestion

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Feature Specification and Benefits

Product details of Kingston HyperX Impact Black 8GB DDR3 Laptop RAM (1600MHz - CL9 - Low Voltage - HX316LS9IB/8) Feature Highlights DESCRIPTION HyperX HX316LS9IB/8 is a 1G x 64-bit (8GB) DDR3L-1600 CL9 SDRAM (Synchronous DRAM) 2Rx8, low voltage, memory module, based on sixteen 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3L-1600 at a low latency timing of 9-9-9 at 1.35V or 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below.  FEATURES • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB : Height 1.180” (30.00mm), double sided component SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 33.75ns (min.) Maximum Operating Power TBD W* @1.35V UL Rating 94 V - 0 Operating Temperature 0o  C to 85o C Storage Temperature -55o  C to +100o C *Power will vary depending on the SDRAM used.

 

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